a) Top SEM view of GaAs/Ge pyramids grown by MOVPE on top of 8-μm-tall... | Download Scientific Diagram
Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition | Scientific Reports
Coatings | Free Full-Text | Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells
Electronics | Free Full-Text | Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices
Selective Area Growth - an overview | ScienceDirect Topics
Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy | Scientific Reports
Selective Area Growth - an overview | ScienceDirect Topics
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(1 1 1)B substrate by a MOCVD method - ScienceDirect
III-nitride core–shell nanorod array on quartz substrates | Scientific Reports
Crystals | Free Full-Text | Heteroepitaxial Growth of III-V Semiconductors on Silicon
III–V material integration, IBM Research Zurich
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Figure S1. Selective area growth and selectivity. a,b. Schematic... | Download Scientific Diagram
Selectivity maps for GaAs and InAs SAG. (a) Illustration of the III−V... | Download Scientific Diagram
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | SpringerLink
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD | Crystal Growth & Design
Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing | Scientific Reports
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
